sot23 pnp silicon planar small signal transistors issue 2 ? february 95 partmarking detail ? bcx71g ? bg bcx71h ? bh bcx71j ? bj bcx71k ? bk bcx71gr ? cg bcx71hr ? 6p BCX71JR ? j8 bcx71kr ? ck absolute maximum ratings. parameter symbol value unit collector-base voltage v ces -45 v collector-emitter voltage v ceo -45 v emitter-base voltage v ebo -5 v continuous collector current i c -200 ma base current i b -50 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c bcx71 page no electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-emitter breakdown voltage v (br)ceo -45 v i ceo =-2ma emitter-base breakdown voltage v (br)ebo -5 v i ebo =-1 m a collector-emitter cut-off current i ces -20 -20 na m a v ces =-45v v ces =-45v ,t amb =150 o c emitter-base cut-off current i ebo -20 na v ebo =-4v collector-emitter saturation voltage v ce(sat) -0.12 -0.25 -0.25 -0.55 v v i c =-10ma,i b = -0.25ma i c =-50ma, i b =-1.25ma base-emitter saturation voltage v be(sat) -0.60 -0.68 -0.70 -0.80 -0.85 -1.05 v v i c =-10ma, i b =-0.25ma i c =-50ma, i b =-1.25ma base - emitter voltage v be -0.6 -0.55 -0.65 -0.72 -0.75 v v v i c =-10 m a, v ce =-5v i c =-2ma, v ce =-5v i c =-50ma, v ce =-1v static forward bcx71g current transfer ratio bcx71h bcx71j bcx71k h fe 120 60 140 170 220 i c =-10 m a, v ce =-5v i c =-2ma, v ce =-5v i c =-50ma, v ce =-1v 30 180 80 200 250 310 i c =-10 m a, v ce =-5v i c =-2ma, v ce =-5v i c =-50ma, v ce =-1v 40 250 100 270 350 460 i c =-10 m a, v ce =-5v i c =-2ma, v ce =-5v i c =-50ma, v ce =-1v 100 380 110 340 500 630 i c =-10 m a, v ce =-5v i c =-2ma, v ce =-5v i c =-50ma, v ce =-1v transition frequency f t 180 mhz i c =-10ma, v ce = -5v f = 100mhz emitter-base capacitance c ebo 11 pf v ebo = -0.5v,f =1mhz collector-base capacitance c cbo 6pfv cbo = -10v, f =1mhz noise figure n 2 6 db i c =- 0.2ma, v ce =- 5v r g =2k w, f=1khz d f=200hz switching times: delay time rise time turn-on time storage time fall time turn-off time t d t r t on t s t f t off 35 50 85 400 80 480 150 800 ns ns ns ns ns ns -i c : i b1 : - i b2 =10:1:1ma r 1 =r 2 =5k w v bb =-3.6v, r l =990 w *measured under pulsed conditions. pulse width=300 m s. duty cycle c b e sot23 bcx71 r 1 r 2 50 w bay63 r l t r < 5nsec z in >100k w oscilloscope v cc (-10v) +v bb 1 m s -10v t r <5nsec mark/space ratio < 0.01 z s = 50 w h fe group g h fe group f h fe group j h fe group k min. typ. max. min. typ max. min. typ max. min. typ max. h 11e 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 k h 12e 1.5 2 2 3 10 -4 h 21e 200 260 330 520 h 22e 18 30 24 50 30 60 50 100 m s four terminal network data (i c =2ma, v ce =5v, f=1khz) spice parameter data is available upon request for this device switching circuit
sot23 pnp silicon planar small signal transistors issue 2 ? february 95 partmarking detail ? bcx71g ? bg bcx71h ? bh bcx71j ? bj bcx71k ? bk bcx71gr ? cg bcx71hr ? 6p BCX71JR ? j8 bcx71kr ? ck absolute maximum ratings. parameter symbol value unit collector-base voltage v ces -45 v collector-emitter voltage v ceo -45 v emitter-base voltage v ebo -5 v continuous collector current i c -200 ma base current i b -50 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c bcx71 page no electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-emitter breakdown voltage v (br)ceo -45 v i ceo =-2ma emitter-base breakdown voltage v (br)ebo -5 v i ebo =-1 m a collector-emitter cut-off current i ces -20 -20 na m a v ces =-45v v ces =-45v ,t amb =150 o c emitter-base cut-off current i ebo -20 na v ebo =-4v collector-emitter saturation voltage v ce(sat) -0.12 -0.25 -0.25 -0.55 v v i c =-10ma,i b = -0.25ma i c =-50ma, i b =-1.25ma base-emitter saturation voltage v be(sat) -0.60 -0.68 -0.70 -0.80 -0.85 -1.05 v v i c =-10ma, i b =-0.25ma i c =-50ma, i b =-1.25ma base - emitter voltage v be -0.6 -0.55 -0.65 -0.72 -0.75 v v v i c =-10 m a, v ce =-5v i c =-2ma, v ce =-5v i c =-50ma, v ce =-1v static forward bcx71g current transfer ratio bcx71h bcx71j bcx71k h fe 120 60 140 170 220 i c =-10 m a, v ce =-5v i c =-2ma, v ce =-5v i c =-50ma, v ce =-1v 30 180 80 200 250 310 i c =-10 m a, v ce =-5v i c =-2ma, v ce =-5v i c =-50ma, v ce =-1v 40 250 100 270 350 460 i c =-10 m a, v ce =-5v i c =-2ma, v ce =-5v i c =-50ma, v ce =-1v 100 380 110 340 500 630 i c =-10 m a, v ce =-5v i c =-2ma, v ce =-5v i c =-50ma, v ce =-1v transition frequency f t 180 mhz i c =-10ma, v ce = -5v f = 100mhz emitter-base capacitance c ebo 11 pf v ebo = -0.5v,f =1mhz collector-base capacitance c cbo 6pfv cbo = -10v, f =1mhz noise figure n 2 6 db i c =- 0.2ma, v ce =- 5v r g =2k w, f=1khz d f=200hz switching times: delay time rise time turn-on time storage time fall time turn-off time t d t r t on t s t f t off 35 50 85 400 80 480 150 800 ns ns ns ns ns ns -i c : i b1 : - i b2 =10:1:1ma r 1 =r 2 =5k w v bb =-3.6v, r l =990 w *measured under pulsed conditions. pulse width=300 m s. duty cycle c b e sot23 bcx71 r 1 r 2 50 w bay63 r l t r < 5nsec z in >100k w oscilloscope v cc (-10v) +v bb 1 m s -10v t r <5nsec mark/space ratio < 0.01 z s = 50 w h fe group g h fe group f h fe group j h fe group k min. typ. max. min. typ max. min. typ max. min. typ max. h 11e 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 k h 12e 1.5 2 2 3 10 -4 h 21e 200 260 330 520 h 22e 18 30 24 50 30 60 50 100 m s four terminal network data (i c =2ma, v ce =5v, f=1khz) spice parameter data is available upon request for this device switching circuit
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